Display device and method for manufacturing display device

ABSTRACT

A display device and a method for manufacturing the display device are provided. The display device includes an organic layer on an auxiliary wiring is removed with high precision by one operation and, thereby, the yield and the productivity are improved. A lower electrode is formed by patterning in each pixel on a substrate. An auxiliary wiring including a light absorption layer is formed between individual pixels. An organic layer is formed on the substrate while covering the lower electrodes. Laser irradiation is conducted from the organic layer side, the laser light is converted to heat in the light absorption layer exposed at a portion under the organic layer, and the organic layer portion above the light absorption layer is removed selectively. An upper electrode is formed on the organic layer and is connected to the light absorption layer portion of the auxiliary wiring.

CROSS REFERENCES TO RELATED APPLICATIONS

The present application claims priority to Japanese Patent ApplicationJP 2005-236298 filed in the Japanese Patent Office on Aug. 17, 2005, theentire contents of which are incorporated herein by reference.

BACKGROUND

The present application relates to a method for manufacturing a displaydevice and to a display device. In particular, it relates to a methodfor manufacturing a display device, in which a plurality of organicelectroluminescent elements are disposed, and a display device producedby this method.

An organic electroluminescent element taking advantage ofelectroluminescence (EL) of an organic material (so-called organicelectroluminescent element) is configured by holding an organic layer,which is a laminate of a hole transporting layer, a light emittinglayer, and the like, between a lower electrode and an upper electrode,and has been noted as a light emitting element capable of emitting highluminance light by low voltage direct current driving. A display deviceincluding such an organic electroluminescent element (hereafter simplyreferred to as a display device) is an excellent flat panel type displaydevice and has been developed toward the scale-up of screen from theviewpoint of the color reproducibility and the response speed.

The above-described display device is allowed to deliver higherperformance on the basis of active matrix drive by including thin filmtransistors (TFTs) to drive organic electroluminescent elements. In theactive matrix-driven display device, an interlayer insulation film isdisposed covering TFTs, and organic electroluminescent elements aredisposed on the interlayer insulation film. Lower electrodes ofindividual organic electroluminescent elements are formed on theinterlayer insulation film by patterning on a pixel basis while beingconnected to the TFTs. An organic layer of the organicelectroluminescent elements is disposed on these lower electrodes. Anupper electrode is disposed as a solid film common to organicelectroluminescent elements of individual pixels, while organic layersare held between the lower electrodes and the upper electrode.

For the above-described active matrix-driven display device, a so-calledtop emission type, in which the emitted light is taken out from the sideopposite to a substrate provided with the TFT, is effective at ensuringan aperture ratio. In this case, it is desired that the upper electrodeis formed from a transparent material or a translucent material.However, the upper electrode including such a material as a solid filmcommon to individual pixels has a high resistance value and displayquality is significantly deteriorated due to a voltage drop.Consequently, the resistance of the upper electrode is reduced byforming an auxiliary wiring between pixels as the same layer with thelower electrode and connecting the upper electrode to the auxiliarywiring.

However, as pixel sizes and pixel pitches have been made finer in recentyears, organic layers are formed having different colors on a pixelcorresponding to each color of RGB basis, and tend to significantlyextend in between pixels and cover the auxiliary wiring. In theconfiguration in which the organic layer is formed as a solid filmcommon to individual pixels in consideration of the limit ofdifferentiation in colors of the organic layers due to theabove-described miniaturization, all over the surface of the auxiliarywiring is covered with the organic layer. In this case, the contactbetween the auxiliary wiring and the upper electrode becomes poor due tothe organic layer on the auxiliary wiring.

Consequently, a method in which the organic layer on the auxiliarywiring has been removed by ablation through laser irradiation has beenproposed. In this case, the irradiation portion of the laser light(radiant ray) is set by using a mask having an opening at the positioncorresponding to the auxiliary wiring, and the organic layer portion onthe auxiliary wiring is selectively ablated. Alternatively, the laserlight is applied after being aligned with the auxiliary wiring and,thereby, the organic layer portion on the auxiliary wiring isselectively ablated (refer to Japanese Unexamined Patent ApplicationPublication No. 2005-11810, in particular, paragraphs [0031] and[0032]).

However, according to the above-described method disclosed by JapaneseUnexamined Patent Application Publication No. 2005-11810, a misalignmentbetween the auxiliary wiring and the mask opening and a misalignmentbetween the auxiliary wiring and the position of the laser irradiationtend to occur, and a reduction of the yield results. In particular, inthe method in which a mask is used, the production cost is increased dueto the use of the mask. In the method in which the laser light isapplied after being aligned with the auxiliary wiring, an operation timeis increased as compared with that of the laser irradiation by oneoperation and, therefore, the production efficiency is reduced.

It is desired to provide a method for manufacturing a display deviceprovided with organic electroluminescent elements and a display deviceproduced by the method, wherein an organic layer on an auxiliary wiringis removed with high precision by one operation and, thereby, the yieldis improved and the productivity is improved.

SUMMARY

According to an embodiment, a display device, in which a plurality oforganic electroluminescent elements including an organic layer heldbetween a lower electrode and an upper electrode are disposed on asubstrate, is provided. The display device includes the lower electrodedisposed by patterning in each pixel on the substrate and an auxiliarywiring disposed between pixels on the substrate. Among them, theauxiliary wiring includes a light absorption layer formed from anelectrically conductive material having a light absorption coefficienthigher than that of the lower electrode. The organic layer is disposedon the substrate including the lower electrodes and the auxiliarywiring, while covering the lower electrode and exposing the lightabsorption layer portion of the auxiliary wiring. Furthermore, the upperelectrode is disposed on this organic layer, while the above-describedorganic layer is held between the lower electrode and the upperelectrode and the upper electrode is connected to the above-describedlight absorption layer constituting the auxiliary wiring and beingexposed at the organic layer.

According to an embodiment, a method for manufacturing a display deviceis provided, and the following procedures are carried out. The lowerelectrode is formed by patterning in each pixel on the substrate. Inaddition, an auxiliary wiring is formed between individual pixels on thesubstrate, the auxiliary wiring including a light absorption layerformed from an electrically conductive material having a lightabsorption coefficient higher than that of the lower electrode. Theorganic layer is formed on the substrate including the lower electrodesand the auxiliary wiring, while covering at least the lower electrodes.Laser irradiation is conducted from the organic layer side, the laserlight is converted to heat in the light absorption layer exposed at aportion under the organic layer, and the organic layer portion above thelight absorption layer is removed selectively. Subsequently, the upperelectrode is formed on the substrate in such a way that the organiclayer is held between the lower electrode and the upper electrode andthe upper electrode is connected to the light absorption layer portion,from which the organic layer has been removed, of the auxiliary wiring.

In the above-described embodiments, the lower electrode and theauxiliary wiring disposed under the organic layer have differentconfigurations. In the auxiliary wiring, the light absorption layerformed from an electrically conductive material having the lightabsorption coefficient higher than that of the lower electrode isdisposed, and this light absorption layer is exposed. In this manner,the light applied from the exposure side of the light absorption layeris not absorbed by the lower electrode, but is simply absorbed by thelight absorption layer of the auxiliary wiring so as to be converted tothe heat. The organic layer on the auxiliary wiring (light absorptionlayer) is removed by the resulting heat. That is, the organic layer onthe light absorption layer constituting the auxiliary wiring isselectively removed with high precision and without misalignmentrelative to the auxiliary wiring not by conducting selective lightirradiation, but by conducting light irradiation all over the surface.Consequently, the upper electrode is connected simply to the portion,from which the organic layer has been removed, of the auxiliary wiring.

As described above, according to the embodiments, since it is possibleto remove selectively the organic layer on the auxiliary wiring withhigh precision not by conducting selective light irradiation, but byconducting light irradiation all over the surface, it becomes possibleto improve the yield and improve the productivity in the production of adisplay device including the organic electroluminescent elements inwhich a voltage drop of the upper electrode is prevented by connectingthe auxiliary wiring

Additional features and advantages are described herein, and will beapparent from, the following Detailed Description and the figures.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic plan view for explaining a display deviceaccording to an embodiment.

FIG. 2 is a schematic sectional view for explaining the configuration ofa display device according to a first embodiment.

FIGS. 3A to 3D are sectional step diagrams showing a method formanufacturing the display device according to the first embodiment.

FIGS. 4E and 4F are sectional step diagrams showing the method formanufacturing a display device according to the first embodiment.

FIG. 5 is a diagram for explaining laser irradiation.

FIGS. 6A and 6B are schematic sectional views for explaining theconfiguration of a display device according to a second embodiment.

FIGS. 7A and 7B are schematic sectional views for explaining theconfiguration of a display device according to a third embodiment.

DETAILED DESCRIPTION

Embodiments will be described below in detail with reference to thedrawings.

First Embodiment

FIG. 1 is a schematic plan view for explaining a display deviceaccording to a first embodiment. A display device 1 shown in the drawingis an active matrix-driven display device, and a plurality of organicelectroluminescent elements EL are disposed in corresponding toindividual pixels a on a substrate 2. An auxiliary wiring N connected toorganic electroluminescent elements EL is disposed between individualpixels a, as described below.

FIG. 2 is a schematic sectional view for explaining the configuration ofthe display device 1 according to the first embodiment, and iscorresponding to a section II-II shown in FIG. 1.

As shown in FIG. 2, pixel circuits provided with thin film transistorsTr, capacitative elements (not shown), and the like are disposed on thesubstrate 2, and an interlayer insulation film 3 is disposed coveringthe pixel circuits. Organic electroluminescent elements EL are disposedon the interlayer insulation film 3.

Each organic electroluminescent element EL is provided with a lowerelectrode 4 connected to the thin film transistor Tr through a contacthole disposed in the interlayer insulation film 3, an organic layer 5covering the lower electrode 4, and an upper electrode 6 covering theorganic layer 5 and being disposed commonly to organicelectroluminescent elements EL of individual pixels a. The lowerelectrode 4 is used as, for example, an anode (or a cathode), and hasbeen patterned as a pixel electrode configured by using a materialhaving good reflection characteristics. The periphery of each lowerelectrode 4 is covered with an insulating film pattern 7, and the centerportion is in the state of being exposed widely. A portion, which isexposed at the insulating film pattern 7, of the lower electrode 4serves as a light emitting portion, for example, a portion correspondingto the pixel a here. The upper electrode 6 is used as, for example, acathode (or an anode), and is formed taking the shape of a solid film asan electrode common to individual organic electroluminescent elementsEL. The upper electrode 6 is formed having a light transmission propertyand, thereby, the resulting organic electroluminescent element EL isconfigured to be of upper surface light emission type, in which theemitted light is taken out from the upper electrode 6 side.

The auxiliary wiring N, which is the same layer as the lower electrode4, is disposed between the pixels a provided with the organicelectroluminescent elements EL having the above-described configuration.In the first embodiment, the auxiliary wiring N is composed of a highlyelectrically conductive layer 8 formed from the same material as thatfor the lower electrode 4 and a light absorption layer 9 laminated onthe highly electrically conductive layer 8 and exposed. It is desirablethat the light absorption layer 9 is formed from a material having thelight absorption property higher than that of the lower electrode 4 andthe highly electrically conductive layer 8 and having a goodphoto-thermal conversion efficiency.

Since the light absorption coefficient of the lower electrode 4 and thatof the light absorption layer 9 are differentiated, when the laser lightis applied, the laser light is absorbed and converted to heat in thelight absorption layer 9, and the organic layer 5 is removed due to theresulting heat generation. However, the heat generation is suppressed inthe lower electrode 4. In the upper surface light emission type displaydevice 1, a material having excellent reflection characteristics is usedas the lower electrode 4. Therefore, in many cases, the light absorptioncoefficient of the lower electrode 4 is on the order of a few percent,and it is preferable that a material having a light absorptioncoefficient of at least about 10% is used as the light absorption layer9. That is, when the laser light is applied, it is important that thelaser light is absorbed and converted to heat in the light absorptionlayer 9, and the organic layer 5 is removed due to the resulting heatgeneration, while the heat generation is suppressed in such a way as toleave the organic layer 5 on the lower electrode 4. For this reason, itis preferable that the lower electrode 4 and the light absorption layer9 are configured by using materials having different photo-thermalconversion efficiencies. Since the display device 1 is of upper surfacelight emission type, a material having good reflection characteristicsand good electrical conductivity is used for the lower electrode 4.

Specifically, metals, e.g., molybdenum, nickel, chromium, and titanium,and alloys thereof are used as the material for constituting the lightabsorption layer 9. On the other hand, metals, e.g., silver, aluminum,gold, and platinum, and alloys thereof are used as the material forconstituting the lower electrode 4 (furthermore, highly electricallyconductive layer 8).

The insulating pattern 7 covering the perimeter of the lower electrode 4is formed by patterning into the shape suitable for exposing theauxiliary wiring N. Furthermore, the organic layer 5 is disposed in sucha way as to expose at least a part of the auxiliary wiring N,specifically, the light absorption layer 9 constituting the auxiliarywiring N. The upper electrode 6 is connected to a portion, which isexposed at the organic layer 5 and the insulating pattern 7, of theauxiliary wiring N, that is, the light absorption layer 9 of theauxiliary wiring N.

A method for manufacturing the display device 1 having such aconfiguration will be described below in detail with reference tosectional step diagrams shown in FIGS. 3A to 3D and FIGS. 4E and 4F.

As shown in FIG. 3A, pixel circuits provided with thin film transistorsTr, capacitative elements, although not shown in the drawing, and thelike are disposed in individual pixels a on the substrate 2 by a generalprocess. The interlayer insulation film 3 having a flat surface isformed from an organic material, e.g., polyimide, or a silicon basedinorganic insulating film while covering the thin film transistors Tr.After the film formation, contact holes reaching the thin filmtransistors Tr are formed by a general lithography step.

The highly electrically conductive layer 8 is formed on the interlayerinsulation film 3 by a sputtering method. The highly electricallyconductive layer 8 is a film constituting the lower electrode, and amaterial having good electrical conductivity as well as good reflectioncharacteristics is used. For example, metals, e.g., silver, aluminum,gold, and platinum, and alloys thereof are used. Here, the highlyelectrically conductive layer 8 is formed by using a silver alloy, as anexample. The highly electrically conductive layer 8 is formed to connectto the thin film transistor Tr through the connection hole in theinterlayer insulation film 3.

The light absorption layer 9 is formed on the highly electricallyconductive layer 8 by the sputtering method. An electrically conductivematerial having a light absorption coefficient higher than that of thehighly electrically conductive layer 8 is used for the light absorptionlayer 9. For example, metals, e.g., molybdenum, nickel, chromium, andtitanium, and alloys thereof are used. Here, the light absorption layer9 is formed by using molybdenum, as an example.

As shown in FIG. 3B, the light absorption layer 9 on the highlyelectrically conductive layer 8 is patterned, so that the lightabsorption layer 9 is left simply in between the pixels a. At this time,the light absorption layer 9 is pattern-etched by using a resist patternas a mask, although not shown in the drawing. The pattern etching isconducted by dry etching or wet etching. The dry etching is used here.In this case, CF₄/O₂ is used as an etching gas. After the etching isfinished, the resist pattern is removed.

As shown in FIG. 3C, the highly electrically conductive layer 8 ispatterned and, thereby, the lower electrode 4 in the shape correspondingto the pixel a is formed. By this patterning, the highly electricallyconductive layer 8 in the shape of the auxiliary wiring N is left inbetween the pixels a while being insulated from the lower electrode 4formed from the highly electrically conductive layer 8. At this time,the highly electrically conductive layer 8 is pattern-etched by using aresist pattern as a mask, although not shown in the drawing. The patternetching is conducted by dry etching or wet etching. The wet etching isused here. In this case, a mixed acid is used as an etchant. After theetching is finished, the resist pattern is removed. Since the lowerelectrode 4 and the highly electrically conductive layer 8, which is apart of the auxiliary wiring N, are specified to be the same layer, asdescribed above, addition of a step is suppressed.

In this manner, the auxiliary wiring N composed of the highlyelectrically conductive layer 8 and the light absorption layer 9laminated thereon are formed. The wiring shape of the auxiliary wiring Nis maintained by the highly electrically conductive layer 8 serving asthe lower layer, and the light absorption layer 9 is laminated on atleast a part of the highly electrically conductive layer 8.

For the auxiliary wiring N composed of the highly electricallyconductive layer 8 and the light absorption layer 9 thereon, it isbeneficial that the wiring shape of the auxiliary wiring N is maintainedby the highly electrically conductive layer 8 and the light absorptionlayer 9, and the entire portion is not necessarily a laminate. However,this is preferable because the resistance of the auxiliary wiring N iskept at low when the wiring shape of the auxiliary wiring N ismaintained by the highly electrically conductive layer 8. The lightabsorption layer 9 is not necessarily patterned into a continuous wiringshape of the auxiliary wiring N. It is beneficial that the lightabsorption layer 9 is disposed simply at portions where the auxiliarywiring N is connected to the upper electrode, as described below.

The formation procedure of the lower electrode 4 and the auxiliarywiring N is not limited to the above-described steps explained withreference to FIGS. 3A to 3C, as long as the above-describedconfiguration is ensured. For example, the lower electrodes 4 and thehighly electrically conductive layers 8 of the auxiliary wiring N may beformed by patterning in the same step and, thereafter, the lightabsorption layers 9 of the auxiliary wiring N may be formed bypatterning.

As shown in FIG. 3D, the insulating pattern 7 in the shape covering theperimeter of the lower electrode 4 is formed. An insulating film isformed from an organic material or a silicon based inorganic materialand, thereafter, the insulating pattern 7 is formed by aphotolithography step. At this time, the insulating pattern 7 is formedto take on the shape which covers the perimeters of the lower electrodes4 in such a way as to expose the center portion and which exposes atleast the light absorption layers 9 of the auxiliary wiring N. Theinsulating pattern 7 may cover other portion of the auxiliary wiring Nas long as at least a part of the light absorption layer 9 is exposed.Alternatively, the entire portion of the auxiliary wiring N may beexposed.

As shown in FIG. 4E, the organic layer 5 is formed while covering theentire surface of the substrate 2. The organic layer 5 is provided withat least an organic light emitting layer, and is formed to have alaminated structure in which a plurality of layers are formedsequentially. A material for constituting the organic layer 5 may be thesame as the materials for the organic layers of general organicelectroluminescent elements. The film formation method may beappropriately selected from general film formation methods, e.g., anevaporation method, a CVD method, a printing method, and an ink-jetmethod, depending on the material to be used. For example, evaporationfilm formation is conducted for a low-molecular material.

The organic layer 5 is not limited to be formed covering all over thesurface of the substrate 2, but may be formed by patterning on a pixel abasis. However, since the organic layer 5 is desired to completely coverthe lower electrode 4, the organic layer 5 is formed in such a way as toextend on the insulating pattern 7 and the auxiliary wiring N, even insuch a case.

As shown in FIG. 4F, the laser light Lh is applied from above theorganic layer 5. The laser light Lh is converted to heat in the lightabsorption layer 9 under the organic layer 5 and, thereby, a part of theorganic layer 5 disposed above the light absorption layer 9 isselectively removed. At this time, it is important to apply the laserlight Lh with a wavelength, at which the light absorption layer 9constituting the auxiliary wiring N exhibits high absorption and thelower electrode 4 configured by using the highly electrically conductivelayer 9 exhibits poor absorption. Furthermore, the laser light Lh isapplied at such an amount of irradiation that the organic layer 5located above the light absorption layer 9 is removed by the heatconverted in the light absorption layer 9.

The above-described laser light Lh is applied over the entire surface ofthe substrate 2 unselectively. In this case, as shown in FIG. 5, theirradiation surface s of the laser light Lh may take on a long-lengthshape, and the long-length irradiation surface s may be moved in onedirection along the auxiliary wiring N at a predetermined speed.Alternatively, the irradiation surface s′ of the laser light Lh may takeon a shape satisfactorily wider than the pixel a, and this wideirradiation surface s′ may be subjected to step movement relative to thesurface of the substrate 2.

In order to apply the above-described laser light Lh, as shown in FIG.4F, a movable mirror (galvano mirror) 102 is disposed in an optical pathof the laser light Lh emitted from an excitation light source 101, themovable mirror is moved at predetermined angles toward the substrate 2and, thereby, the laser light Lh is applied to the surface side of thesubstrate 2 while the irradiation position is moved. The irradiationsurface of the above-described laser light Lh is enlarged and shaped bya lens system 103 including an optical element (beam expander), disposedin the optical path of the light Lh reflected by the movable mirror 102.The lens system to shape the irradiation surface of the laser light Lhmay be disposed additionally in between the excitation light source 101and the movable mirror 102.

After the organic layer 5 portion on the light absorption layer 9 of theauxiliary wiring N is removed selectively, as described above, a film ofthe upper electrode 6 is formed from a material having a lighttransmission property while covering the entire surface of the substrate2, as shown in the above-described FIG. 2. A transparent electricallyconductive material, e.g., a thin metal film or ITO (indium tin oxide),is used as the material having a light transmission property. Forexample, the film of the upper electrode 6 is formed from a magnesiumalloy here. The film formation of the above-described upper electrode 6is conducted by an evaporation method, a sputtering method, a CVDmethod, or the like.

The above-described upper electrode 6 becomes in a state of beinginsulated from the lower electrode 4 due to the organic layer 5 and theinsulating pattern 7. The upper electrode 6 becomes in a state of beingconnected to the light absorption layer 9 exposed at the portion, fromwhich the organic layer 5 has been removed, of the auxiliary wiring N.Consequently, the organic electroluminescent element EL is formed, inwhich the organic layer 5 is held between the lower electrode 4 and theupper electrode 6.

After the above-described steps, although not shown in the drawing, aprotective film is formed from silicon nitride (SiN), silicon oxide(SiO_(X)), or the like on the upper electrode 6 by a general sputteringmethod, CVD method, evaporation method, or the like, so that the displaydevice 1 is completed.

According to the above-described manufacturing method of the firstembodiment, as shown in FIG. 4F, the lower electrode 4 and the auxiliarywiring N disposed under the organic layer 5 have differentconfigurations. That is, the light absorption layer 9 formed from theelectrically conductive material having the light absorption coefficienthigher than that of the lower electrode 4 is disposed in the auxiliarywiring N, and this light absorption layer 9 is exposed.

The laser light Lh is applied over the entire surface from the side ofthe organic layer 5 covering them. This laser light Lh is absorbedsimply by the light absorption layer 9 so as to be converted to theheat. The organic layer 5 portion simply on the light absorption layer 9constituting the auxiliary wiring N is removed selectively by theresulting heat. Consequently, the organic layer 5 on the lightabsorption layer 9 constituting the auxiliary wiring N may beselectively removed with high precision without causing misalignmentrelative to the auxiliary wiring N by applying the laser light Lh overthe entire surface of the substrate 2 without using an expensive maskand without conducting alignment which takes much time and effort. Asshown in FIG. 2, the upper electrode 6 may be connected simply to aportion, from which the organic layer 5 has been removed, of theauxiliary wiring.

As a result, it becomes possible to improve the yield and improve theproductivity in the production of a display device 1 including theorganic electroluminescent elements EL having a configuration in which avoltage drop of the upper electrode 6 is prevented by connecting theauxiliary wiring N.

In the above-described first embodiment, the auxiliary wiring N has aconfiguration in which the light absorption layer is exposed at theorganic layer 5 side, and the organic layer 5 is partly removed byapplication of the laser light Lh from the organic layer 5 side, notfrom the substrate 2 side. Therefore, the influence of the laser lightLh may not be exerted on the pixel circuit including the thin filmtransistor Tr, disposed on the side nearer to the substrate 2 than isthe lower electrode 4. That is, when the laser light Lh is applied fromthe substrate 2 side, if the pixel circuit including the thin filmtransistor Tr is composed of a material having the light absorptionproperty, the photo-thermal conversion occurs in this material portionand the heat is generated. In this case, a portion of the organic layer5 other than the portion on the auxiliary wiring N may be removed and,therefore, the target portion of the organic layer 5 on the auxiliarywiring N may not be removed selectively. However, according to themethod of the present first embodiment, there may be no fear thereof.

Second Embodiment

FIGS. 6A and 6B are schematic sectional views for explaining theconfiguration of a display device 1′ according to the present secondembodiment. FIGS. 6A and 6B are corresponding to a section II-II shownin the above-described FIG. 1. The display device 1′ of the secondembodiment shown in FIG. 6A is different from the display device 1explained in the first embodiment in the configuration of the auxiliarywiring N′, but the other configurations are the same.

The auxiliary wiring N′ in the display device 1′ is simply composed of alight absorption layer formed from a material having a light absorptionproperty higher than that of the lower electrode 4 and a goodphoto-thermal conversion efficiency.

In the production of the display device 1′ having the above-describedconfiguration, as shown in FIG. 6B, the procedure up to the formation ofthe interlayer insulation film 3 is conducted as in the above-describedfirst embodiment. Thereafter, the auxiliary wiring N′ and the lowerelectrode 4 are formed individually on the interlayer insulation film 3by patterning. At this time, in order to ensure the surface state of thelower electrode 4, it is preferable that the auxiliary wiring N′ isformed by patterning and, thereafter, the lower electrode 4 is formed bypatterning.

As in the first embodiment, an insulating pattern in the shape, in whichat least a part of the auxiliary wiring N′ composed of the lightabsorption layer 9 is exposed, is formed. An organic layer 5 is formedall over the surface and, thereafter, the laser light Lh is applied allover the surface from the organic layer 5 side. In this manner, thelaser light Lh is converted to the heat in the auxiliary wiring N′composed of the light absorption layer 9 under the organic layer 5, andthe organic layer 5 disposed above the auxiliary wiring N′ is partly,selectively removed.

In the above-described second embodiment, the auxiliary wiring N′ iscomposed of the light absorption layer 9 having the light absorptioncoefficient higher than that of the lower electrode 4, and the laserlight Lh is applied all over the surface from the side of the organiclayer 5 covering them. This laser light Lh is absorbed simply by thelight absorption layer 9 so as to be converted to the heat. The organiclayer 5 portion simply on the light absorption layer 9 constituting theauxiliary wiring N′ is removed selectively by the resulting heat.Consequently, as in the first embodiment, the organic layer 5 on theauxiliary wiring N′ may be selectively removed with high precisionwithout causing misalignment relative to the auxiliary wiring N′ byapplying the laser light Lh all over the surface of the substrate 2without using an expensive mask and without conducting alignment whichtakes much time and effort. Furthermore, it becomes possible to improvethe yield and improve the productivity in the production of a displaydevice 1′ including the organic electroluminescent elements EL having aconfiguration in which a voltage drop of the upper electrode 6 isprevented by connecting the auxiliary wiring N′.

Third Embodiment

FIGS. 7A and 7B are schematic sectional views for explaining theconfiguration of a display device 1″ according to the present thirdembodiment. FIGS. 7A and 7B are corresponding to a section II-II shownin the above-described FIG. 1. The display device 1″ of the thirdembodiment shown in FIG. 7A is different from the display device 1explained in the first embodiment in the configuration of the auxiliarywiring N″, but the other configurations are the same.

The auxiliary wiring N″ in the display device 1″ has a configuration inwhich a highly electrically conductive layer 8 formed from the samematerial as that for the lower electrode 4 is disposed on a lightabsorption layer 9 and the light absorption layer 9 is exposed at aportion, from which the highly electrically conductive layer 8 has beenremoved.

In the production of the display device 1″ having the above-describedconfiguration, as shown in FIG. 7B, the procedure up to the formation ofthe interlayer insulation film 3 is conducted as in the above-describedfirst embodiment. Thereafter, the light absorption layer 9 of theauxiliary wiring N″ is formed by patterning. Subsequently, the lowerelectrode 4 and the highly electrically conductive layer 8 constitutingthe auxiliary wiring N″ are formed by patterning on the interlayerinsulating film 3 provided with the light absorption layer 9. At thistime, it is important that the auxiliary wiring N″ is composed of thelight absorption layer 9 and the highly electrically conductive layer 8and the light absorption layer 9 is exposed at a portion, from which thehighly electrically conductive layer 8 has been removed.

As in the first embodiment, an insulating pattern 7 is formed whiletaking on the shape, in which at least a part of the light absorptionlayer 9 constituting the auxiliary wiring N″ is exposed. An organiclayer 5 is formed all over the surface and, thereafter, the laser lightLh is applied all over the surface from the organic layer 5 side. Inthis manner, the laser light Lh is converted to the heat in the lightabsorption layer 9 constituting the auxiliary wiring N″ under theorganic layer 5, and the organic layer 5 disposed above the lightabsorption layer 9 is partly, selectively removed.

In the above-described third embodiment, as in the first embodiment, theauxiliary wiring N″ is configured by using the light absorption layer 9having the light absorption coefficient higher than that of the lowerelectrode 4, and the laser light Lh is applied all over the surface fromthe side of the organic layer 5 covering them. This laser light Lh isabsorbed simply by the light absorption layer 9 so as to be converted tothe heat. The organic layer 5 portion simply on the light absorptionlayer 9 constituting the auxiliary wiring N″ is removed selectively bythe resulting heat. Consequently, as in the first embodiment, it becomespossible to improve the yield and improve the productivity in theproduction of a display device 1″ including the organicelectroluminescent elements EL having a configuration in which a voltagedrop of the upper electrode 6 is prevented by connecting the auxiliarywiring N″.

Since the auxiliary wiring N″ has a configuration in which the highlyelectrically conductive layer 8 is disposed on the light absorptionlayer 9, the light absorption layer 9 is not patterned on the lowerelectrode 4 formed together with the highly electrically conductivelayer 8 in the same step. Consequently, the surface state of the lowerelectrode 4 is ensured. Since the auxiliary wiring N″ is composed of thelight absorption layer 9 as well as the highly electrically conductivelayer 8, the resistance value of the auxiliary wiring N″ may be reduced.

In each of the above-described embodiments, the light absorption layeris formed as the same layer with the lower electrode. However, even inthe case where the light absorption layer is not formed as the samelayer with the lower electrode, a similar effect may be exerted. Thatis, the light absorption layer formed from a material having aphoto-thermal conversion efficiency higher than that for the lowerelectrode may be disposed while being exposed at a substrate, and a partof the organic film may be selectively removed by the light irradiationfrom above the organic film formed above the light absorption layer. Forexample, the light absorption layer may be formed as the same layer withTFTs and be exposed at the substrate surface.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

It should be understood that various changes and modifications to thepresently preferred embodiments described herein will be apparent tothose skilled in the art. Such changes and modifications can be madewithout departing from the spirit and scope of the present subjectmatter and without diminishing its intended advantages. It is thereforeintended that such changes and modifications be covered by the appendedclaims.

1. A method for manufacturing a display device comprising: forming on asubstrate a plurality of organic electroluminescent elements, eachorganic electroluminescent element including an organic layer heldbetween a lower electrode and an upper electrode; forming a plurality ofthe lower electrodes by patterning a plurality of pixels on thesubstrate; forming an auxiliary wiring between individual pixels on thesubstrate, the auxiliary wiring including an electrically conductivelayer composed of a same material as the lower electrodes, and a lightabsorption layer formed on the electrically conductive layer andcomposed of an electrically conductive material different from thematerial of the lower electrodes and having a light absorptioncoefficient higher than a light absorption coefficient of the lowerelectrode; forming the organic layer on the substrate including thelower electrodes and the auxiliary wiring, while the organic layercovers at least the lower electrodes; conducting laser irradiation abovethe organic layer, converting the laser irradiation to heat in the lightabsorption layer exposed at a portion under the organic layer, andselectively removing a portion of the organic layer above the lightabsorption layer; and forming the upper electrode on the substrate byholding the organic layer between the lower electrodes and the upperelectrode and connecting the upper electrode to a portion of the lightabsorption layer of the auxiliary wiring from which the organic layerhas been removed.
 2. The method for manufacturing a display deviceaccording to claim 1, wherein the laser irradiation is applied over theentire surface of the substrate.
 3. The method for manufacturing adisplay device according to claim 1, wherein the electrically conductivelayer is formed from a material having an electrical conductivity higherthan the electrical conductivity of the light absorption layer, andwherein the electrically conductive layer is formed simultaneously withthe formation of the lower electrode.